Light-Emitting Devices Modulated by Multilevel Resistive Memories-Reference-Cited by-同舟云学术

Light-Emitting Devices Modulated by Multilevel Resistive Memories

Published:2017-12-05 Issue:3 Volume:5 Page:1006-1011
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Yang Xun¹²,Shan Chongxin¹²^ORCID,Liu Qi³,Jiang Mingming¹^ORCID,Lu Yingjie²,Xie Xiuhua¹,Li Binghui¹,Shen Dezhen¹

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China

3. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b01310

Reference40 articles.

1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

2. Efficiency droop in nitride-based light-emitting diodes

3. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”