Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching-Reference-Cited by-同舟云学术

Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

Published:2019-12-28 Issue:24 Volume:126 Page:243301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Renaud Vincent¹,Petit-Etienne Camille¹^ORCID,Barnes Jean-Paul²,Bisserier Jérémie³,Joubert Olivier¹,Pargon Erwine¹

Affiliation:

1. Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, 38000 Grenoble, France

2. Univ. Grenoble Alpes, CEA/LETI Minatec, 38000 Grenoble, France

3. Applied Materials France, 864 chemin des Fontaines, 38190 Bernin, France

Funder

LabEx Minos

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5131030

Reference47 articles.

1. Perspective: New process technologies required for future devices and scaling

2. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

3. Atomic Layer Etching: Rethinking the Art of Etch

4. Topographically selective deposition

5. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transformer coupled toroidal wave-heated remote plasma sources operating in Ar/NF₃ mixtures;Journal of Physics D: Applied Physics;2024-08-02

2. Mechanism study of H2-plasma assisted Si3N4 layered etch;Journal of Vacuum Science & Technology A;2024-06-11

3. Cryogenic etching of silicon compounds using a CHF3 based plasma;Journal of Applied Physics;2023-03-21

4. Applications and mechanisms of anisotropic two-step Si₃N₄ etching with hydrogen plasma conditioning;Journal of Vacuum Science & Technology A;2023-03

5. Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF₄/O₂ and Ar plasmas;Journal of Vacuum Science & Technology A;2022-09