Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning
Author:
Affiliation:
1. Micron Technology, Inc., 8000 S Federal Way, Boise, Idaho 83716, USA
2. Micron School of Materials Science and Engineering, Boise State University, Boise, Idaho 83625, USA
3. Center for Advanced Energy Studies, Idaho Falls, Idaho 83401, USA
Abstract
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0002139
Reference36 articles.
1. Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption
2. Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
3. Mechanism of SiN etching rate fluctuation in atomic layer etching
4. Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle
5. Thermal adsorption-enhanced atomic layer etching of Si3N4
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