Thermal adsorption-enhanced atomic layer etching of Si3N4-Reference-Cited by-同舟云学术

Thermal adsorption-enhanced atomic layer etching of Si3N4

Published:2018-01 Issue:1 Volume:36 Page:01B104
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Woo-Hee¹,Sung Dougyong²,Oh Sejin²,Woo Jehun²,Lim Seungkyu²,Lee Hyunju²,Bent Stacey F.³

Affiliation:

1. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305 and Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 54896, South Korea

2. Samsung Electronics, Manufacturing Technology Center, San 1-1 Banwol-Dong, Hwasung-Si, Gyeonggi-Do 445-330, South Korea

3. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305

Funder

Samsung

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5003271

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