Topographically selective deposition
Author:
Affiliation:
1. University Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
2. CEA, LETI, Minatec Campus, F-38054 Grenoble, France
Funder
LabEx Minos
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5065801
Reference35 articles.
1. Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications
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3. Perspective: New process technologies required for future devices and scaling
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5. Self-Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective-Area Atomic Layer Deposition of Iridium
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