Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties
Author:
Affiliation:
1. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
2. Department of Electronic Information Systems, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
Funder
JSPS KAKENHI
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0080734
Reference38 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
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3. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
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1. Characteristics of grafted monocrystalline Si/ β -Ga2O3p–n heterojunction;Applied Physics Letters;2024-06-24
2. Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices;Fundamental Research;2023-11
3. Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding;Journal of Applied Physics;2023-05-15
4. Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes;IEEE Journal of the Electron Devices Society;2023
5. Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process;Japanese Journal of Applied Physics;2022-11-14
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