The Supercharged Semiconductor: Gallium oxide could make powerful radios and switch thousands of volts
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6/9393983/09393994.pdf?arnumber=9393994
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. III-Nitride/Ga2O3 heterostructure for future power electronics: opportunity and challenges;Quantum Sensing and Nano Electronics and Photonics XX;2024-03-08
2. Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding;Journal of Applied Physics;2023-05-15
3. Electric field induced migration of native point defects in Ga2O3 devices;Journal of Applied Physics;2023-01-17
4. Atomic layer deposition of conductive and semiconductive oxides;Applied Physics Reviews;2022-12
5. Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications;Nanomaterials;2022-06-15
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