Impact ionization in β-Ga2O3
Author:
Affiliation:
1. Electrical Engineering Department, University at Buffalo, Buffalo, New York 14260, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5034120
Reference47 articles.
1. Recent progress in Ga2O3power devices
2. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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