Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga<sub>2</sub>O<sub>3</sub>/Si Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga₂O₃/Si Schottky Barrier Diodes

Published:2023 Issue: Volume:11 Page:135-140
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Qu Zhenyu¹^ORCID,Xu Wenhui¹^ORCID,You Tiangui¹,Shen Zhenghao¹,Zhao Tiancheng¹,Huang Kai¹,Yi Ailun¹,Zhang David Wei²,Han Genquan³^ORCID,Ou Xin¹^ORCID,Hao Yue³^ORCID

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

2. School of Microelectronics, Fudan University, Shanghai, China

3. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Shanghai Rising-Star Program

Shanghai Basic Research Project

Key Research Project of Zhejiang Laboratory

K. C. Wong Education Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10039051.pdf?arnumber=10039051

Reference35 articles.

1. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

2. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY

3. 3.4 kV Breakdown Voltage Ga2O3 Trench Schottky Diode with Optimized Trench Corner Radius

4. Effect of metal contacts on (100) β-Ga2O3 Schottky barriers

5. 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers

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1. Temperature modulation enables in situ growth of gallium oxide nanostructures on thin films exhibiting diverse morphologies;Ceramics International;2024-09

2. Hydrogen-assisted chemical vapor deposition for heteroepitaxial growth of pure ε-Ga2O3 films;Ceramics International;2024-07

3. Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices;Fundamental Research;2023-11

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