Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes-Reference-Cited by-同舟云学术

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Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes

Published:2014-11-10 Issue:19 Volume:105 Page:191604
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bi Jinghui¹²³,Wei Guodong²,Shang Minghui²,Gao Fengmei²,Tang Bin¹,Yang Weiyou²

Affiliation:

1. Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan City 030024, People's Republic of China

2. Institute of Materials, Ningbo University of Technology, Ningbo City 315016, People's Republic of China

3. College of Applied Science, Taiyuan University of Science and Technology, Taiyuan City 030024, People's Republic of China

Funder

973 program

Key Technology Program of Ningbo Municipal Government

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901821

Reference33 articles.

1. Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films

2. Optical microcavities based on amorphous silicon–nitride Fabry–Pérot structures

3. The electronic structure of silicon nitride

4. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study

5. Valence-band electronic structure of silicon nitride studied with the use of soft-x-ray emission

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1. Morphology control and blue luminescent performance of one dimensional Si3N4 via Nano-SiO2 assisted pyrolysis of polyvinylsilazane;Ceramics International;2023-06

2. Fabrication of N-doped 3C-SiC nanobelts with selected (11¯0) top surface and their enhanced transverse piezoresistance behaviours;Ceramics International;2018-10

3. CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings;Conductive Atomic Force Microscopy;2017-08-16

4. Electrical characterization and dielectric impedance of Au/n-CdS/p-porous GaAs/p++-GaAs thin film structures;Journal of Applied Physics;2017-05-14

5. The Piezoresistive Effect in Top–Down Fabricated p-Type 3C-SiC Nanowires;IEEE Electron Device Letters;2016-08

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