Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123293
Reference22 articles.
1. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
2. Infrared Optical Properties of Amorphous Silicon Oxynitride and Their Theoretical Interpretation
3. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
4. Structural order in Si–N and Si–N–O films prepared by plasma assisted chemical vapor deposition process
5. Effect of Nitridation of Silicon Dioxide on Its Infrared Spectrum
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