Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124663
Reference11 articles.
1. Thermal comparison of long-wavelength vertical-cavity surface-emitting laser diodes
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength
4. 1.3 μm room-temperature GaAs-based quantum-dot laser
5. Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well
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