Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=5/a=051201/pdf
Reference20 articles.
1. Growth of GaPAsSb single crystals
2. A novel double heterostructure: The GaAs/GaPAsSb system
3. Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
4. Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs
5. $\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction
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