A novel double heterostructure: The GaAs/GaPAsSb system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Calculation of energy band gaps in quaternary iii/v alloys
2. Growth of GaPAsSb single crystals
3. Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
4. V. Rakovics, T. Görög, E. Lendvay Phys. Status Solidi, to be published.
5. LPE growth of GaAs-GaAlAs superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy;Japanese Journal of Applied Physics;2014-04-23
2. Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure;Journal of Luminescence;2013-04
3. Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs;Applied Physics Letters;2012-12-17
4. GaPSb: A new ternary material for Schottky diode fabrication on InP;Applied Physics Letters;1991-07-22
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