GaPSb: A new ternary material for Schottky diode fabrication on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105450
Reference5 articles.
1. Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity
2. Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion Rule
3. Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx
4. A novel double heterostructure: The GaAs/GaPAsSb system
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