Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure-Reference-Cited by-同舟云学术

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Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure

Published:2013-04 Issue: Volume:136 Page:178-181
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Chen J.Y.,Chen B.H.,Huang Y.S.,Chin Y.C.,Tsai H.S.,Lin H.H.,Tiong K.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference14 articles.

1. Calculation of energy band gaps in quaternary iii/v alloys

2. A novel double heterostructure: The GaAs/GaPAsSb system

3. Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

4. Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

5. $\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAsxPySb1-x-y system;Journal of Alloys and Compounds;2018-03

2. Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures;Optik;2016-09

3. Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy;Optik;2015-05

4. Energy band‐gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures;Physica B: Condensed Matter;2014-05

5. Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs;The European Physical Journal Applied Physics;2014-04

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