Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970906?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Long‐wavelength (1.3 μm) luminescence in InGaAs strained quantum‐well structures grown on GaAs
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
4. High photoluminescence efficiency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique
5. Enhancement of quantum efficiency in thin photodiodes through absorptive resonance
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1. Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si;Applied Physics Letters;2018-08-27
2. Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector;Advances in Condensed Matter Physics;2015
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4. Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots;Journal of Applied Physics;2010-09-15
5. Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer;Applied Physics Letters;2010-08-30
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