Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector
Author:
Affiliation:
1. Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, China
Abstract
Funder
National Scientific Research Plan
Publisher
Hindawi Limited
Subject
Condensed Matter Physics
Link
http://downloads.hindawi.com/journals/acmp/2015/847510.pdf
Reference18 articles.
1. Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors
2. An approach to the design of highly selective resonant-cavity-enhanced photodetectors
3. 1.55μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
4. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
5. High-performance 1.55μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector
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2. Resonant-cavity-enhanced p-i-n photodetector using a high-contrast-grating for 940nm;Optics Express;2022-03-07
3. High Photon Absorptivity of Quantum Dot Infrared Photodetectors Achieved by the Surface Plasmon Effect of Metal Nanohole Array;Nanoscale Research Letters;2020-05-05
4. Resonant Scattering and Energy Relaxation in Quantum Dot Systems;Advances in Condensed Matter Physics;2017
5. Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering;Journal of Nanotechnology;2016
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