Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si-Reference-Cited by-同舟云学术

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Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Published:2018-08-27 Issue:9 Volume:113 Page:093506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Inoue D.¹²,Wan Y.¹,Jung D.¹,Norman J.³^ORCID,Shang C.³,Nishiyama N.²,Arai S.²,Gossard A. C.¹³,Bowers J. E.¹³

Affiliation:

1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

3. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

Funder

Advanced Research Projects Agency - Energy

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5041908

Reference25 articles.

1. Recent advances in silicon photonic integrated circuits

2. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

3. High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology

4. Quantum dot lasers for silicon photonics [Invited]

5. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

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