How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675519
Reference31 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
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3. Indium segregation and In–Ga inter-diffusion effects on the photoluminescence measurements and nonlinear optical properties in lens-shaped InxGa1-xAs/GaAs quantum dots;Journal of Physics and Chemistry of Solids;2022-01
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