Electrical studies on plasma and reactive‐ion‐etched silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343683
Reference34 articles.
1. Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2
2. Reactive‐Ion Etching
3. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
4. High-barrier Schottky diodes on p-type silicon due to dry-etching damage
5. Effects of deuterium plasmas on silicon near‐surface properties
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1. Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices;ACS Applied Materials & Interfaces;2016-04-14
2. Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching;Japanese Journal of Applied Physics;2011-08-22
3. Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching;Japanese Journal of Applied Physics;2011-08-01
4. Structural and electrical characterization of HBr/O2 plasma damage to Si substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-07
5. Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-08-20
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