Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2010-08-20 Issue:8 Volume:49 Page:08JC02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Eriguchi Koji,Nakakubo Yoshinori,Matsuda Asahiko,Kamei Masayuki,Takao Yoshinori,Ono Kouichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

2. Surface Damage on Si Substrates Caused by Reactive Sputter Etching

3. Damage to shallown+/pandp+/njunctions by CHF3+CO2reactive ion etching

4. Electrical studies on plasma and reactive‐ion‐etched silicon

5. Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

2. Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage;Japanese Journal of Applied Physics;2021-03-23

3. Anisotropic selective etching between SiGe and Si;Japanese Journal of Applied Physics;2018-05-22

4. Characteristics and reliability of metal–oxide–semiconductor transistors with various depths of plasma-induced Si recess structure;Japanese Journal of Applied Physics;2018-02-21

5. Advanced simulation technology for etching process design for CMOS device applications;Japanese Journal of Applied Physics;2016-06-28

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