Characteristics and reliability of metal–oxide–semiconductor transistors with various depths of plasma-induced Si recess structure-Reference-Cited by-同舟云学术

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Characteristics and reliability of metal–oxide–semiconductor transistors with various depths of plasma-induced Si recess structure

Published:2018-02-21 Issue:4S Volume:57 Page:04FD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Jone F.,Tsai Yen-Lin,Chen Chun-Yen,Hsu Hao-Tang,Kao Chia-Yu,Hwang Hann-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FD01/pdf

Reference30 articles.

1. Hot-electron and hole-emission effects in short n-channel MOSFET's

2. Performance and reliability design issues for deep-submicrometer MOSFETs

3. A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation

4. Hot-carrier effects in thin-film fully depleted SOI MOSFET's

5. Simulating the competing effects of P- and N-MOSFET hot-carrier aging in CMOS circuits

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