Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Prediction of a Radial Variation of Plasma Structure and Ion Distributions in the Wafer Interface in Two-Frequency Capacitively Coupled Plasma
2. Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology
3. Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process
4. Highly Selective Si3N4/SiOC Etching Using Dual Frequency Superimposed RF Capacitively Coupled Plasma
5. Sub-45 nm SiO2Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
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