Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology-Reference-Cited by-同舟云学术

Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology

Published:2009-08-20 Issue:8 Volume:48 Page:08HD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tokashiki Ken,Cho Hong,Banna Samer,Lee Jeong-Yun,Shin Kyoungsub,Todorow Valentin,Kim Woo-Seok,Bai KeunHee,Joo Sukho,Choe Jeong-Dong,Ramaswamy Kartik,Agarwal Ankur,Rauf Shahid,Collins Ken,Choi SangJun,Cho Han,Kim Hyun Joong,Lee Changhun,Lymberopoulos Dimitris,Yoon Junho,Han Woosung,Moon Joo-Tae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Langmuir probe measurements of a radio frequency induction plasma

2. Radiation Damage in SiO2/Si Induced by VUV Photons

3. Radiation Damage ofSiO2Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma

4. Modeling of oxide breakdown from gate charging during resist ashing

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