Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process-Reference-Cited by-同舟云学术

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Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process

Published:2005-08-05 Issue:8 Volume:44 Page:6241-6244
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kojima Akihiro,Hayashi Hisataka,Sakai Itsuko,Nishiwaki Junya,Takase Akihiro,Ohmura Mitsuhiro,Matsushita Takaya,Shinomiya Eiichiro,Ohiwa Tokuhisa,Yashiro Jun,Himori Shinji,Nagaseki Kazuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of bias voltage on the Ar/CH₂F₂/O₂ plasma etching of Si₃N₄ films;Japanese Journal of Applied Physics;2024-08-01

2. The effects of magnetic field and negative DC voltage on the capacitive argon discharge;Journal of Applied Physics;2023-11-15

3. Control of ion flux-energy distribution at dielectric wafer surfaces by low frequency tailored voltage waveforms in capacitively coupled plasmas;Journal of Physics D: Applied Physics;2023-01-11

4. Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage;Japanese Journal of Applied Physics;2021-03-23

5. Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework;Plasma Processes and Polymers;2019-06-21

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