Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
1. Principles of Plasma Discharges and Materials Processing
2. Prediction of a Radial Variation of Plasma Structure and Ion Distributions in the Wafer Interface in Two-Frequency Capacitively Coupled Plasma
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