Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2and high-kgate dielectrics-Reference-Cited by-同舟云学术

Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2and high-kgate dielectrics

Published:2014-01-01 Issue:3S2 Volume:53 Page:03DF02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kamei Masayuki,Takao Yoshinori,Eriguchi Koji,Ono Kouichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference42 articles.

1. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors

2. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

3. Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs

4. Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

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