Electrical characterization of carrier trapping behavior of defects created by plasma exposures
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aa731a/pdf
Reference31 articles.
1. Plasma Charging Damage
2. Principles of Plasma Discharges and Materials Processing
3. Dry etching damage of silicon: A review
4. Review on the reliability characterization of plasma-induced damage
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1. Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis;Journal of Applied Physics;2022-04-07
2. Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method;Japanese Journal of Applied Physics;2020-04-15
3. Mechanisms for enhancement of sensing performance in CMOS ISFET arrays using reactive ion etching;Sensors and Actuators B: Chemical;2019-08
4. Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance–voltage characteristics;Journal of Physics D: Applied Physics;2019-07-25
5. Characterization of the distribution of defects introduced by plasma exposure in Si substrate;Journal of Vacuum Science & Technology A;2019-01
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