Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs-Reference-Cited by-同舟云学术

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Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Miki H.,Tega N.,Yamaoka M.,Frank D. J.,Bansal A.,Kobayashi M.,Cheng K.,D'Emic C. P.,Ren Z.,Wu S.,Yau J-B.,Zhu Y.,Guillorn M. A.,Park D.-G.,Haensch W.,Leobandung E.,Torii K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479071.pdf?arnumber=6479071

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements;IEEE Transactions on Device and Materials Reliability;2024-06

3. A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Advanced Extraction of Trap Parameters from Single-Defect Measurements;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

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