Electrical characterization of strained Si∕SiGe wafers using transient capacitance measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1891303
Reference11 articles.
1. Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure
2. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
3. Schottky diode characteristics of Ti on strained-Si
4. The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates
5. Minority carrier lifetime and diffusion length in Si1−x−yGexCy heterolayers
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