The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates-Reference-Cited by-同舟云学术

The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates

Published:1999-12 Issue:12 Volume:43 Page:2247-2250
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Riley L.S,Hall S,Bonar J.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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4. MOS (metal oxide semiconductor) physics and technology;Nicollian,1982

5. Surface states at steam-grown silicon–silicon dioxide interfaces;Berglund;IEEE Trans. Elec. Devices,1966

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