Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405151
Reference7 articles.
1. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
3. High-mobility strained-Si PMOSFET's
4. Relaxation of strained Si layers grown on SiGe buffers
5. Defects in epitaxial multilayers
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