Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1807033
Reference18 articles.
1. Oxidation of Silicon Carbide: Problems and Solutions
2. Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations
3. Si-rich6H- and4H−SiC(0001)3×3 surface oxidation and initialSiO2/SiCinterface formation from 25 to 650 °C
4. Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
5. Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
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1. Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide;Vacuum;2021-09
2. Microwave plasma oxidation kinetics of SiC based on fast oxygen exchange;Vacuum;2020-12
3. Amorphization and C segregation based surface generation of Reaction-Bonded SiC/Si composites under micro-grinding;International Journal of Machine Tools and Manufacture;2015-08
4. Synthesis and applications of 18O standards for nuclear reaction analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08
5. Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing;Physica B: Condensed Matter;2014-01
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