Si-rich6H- and4H−SiC(0001)3×3 surface oxidation and initialSiO2/SiCinterface formation from 25 to 650 °C
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.165323/fulltext
Reference54 articles.
1. Electron spectroscopy study of SiC
2. Microwave characteristics of BARITT diodes based on silicon carbide
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