Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference57 articles.
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1. Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing;Solid State Phenomena;2023-07-28
2. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29
3. Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors;Chinese Physics B;2022-11-01
4. Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface;Journal of Applied Physics;2022-06-07
5. SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing;Ceramics International;2021-12
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