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InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

  • Published:2011-07 Issue:1 Volume:110 Page:014503
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Nainani Aneesh,Yuan Ze,Krishnamohan Tejas,Bennett Brian R.,Boos J. Brad,Reason Matthew,Ancona Mario G.,Nishi Yoshio,Saraswat Krishna C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb;IEEE Journal of the Electron Devices Society;2021

3. An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate;Japanese Journal of Applied Physics;2019-07-17

4. Effect of flux ratio on GaSb films grown at a low temperature on Si(111);2019 Joint 8th International Conference on Informatics, Electronics & Vision (ICIEV) and 2019 3rd International Conference on Imaging, Vision & Pattern Recognition (icIVPR);2019-05

5. Recent advances in Sb-based III–V nanowires;Nanotechnology;2019-03-15
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