Recent advances in Sb-based III–V nanowires-Reference-Cited by-同舟云学术

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Recent advances in Sb-based III–V nanowires

Published:2019-03-15 Issue:21 Volume:30 Page:212002
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Gao Zhaofeng,Sun Jiamin,Han Mingming,Yin Yanxue,Gu Yu,Yang Zai-xing^ORCID,Zeng Haibo^ORCID

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Key R&D Program of China

Shandong Provincial Natural Science Foundation, China

Science Technology and Innovation Committee of Shenzhen Municipality

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/ab03ee/pdf

Reference179 articles.

1. Epitaxy of advanced nanowire quantum devices

2. Hard gap in epitaxial semiconductor–superconductor nanowires

3. Ballistic superconductivity in semiconductor nanowires

4. Conductance through a helical state in an Indium antimonide nanowire

5. The fractional a.c. Josephson effect in a semiconductor–superconductor nanowire as a signature of Majorana particles

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1. In Situ Study of Growth Dynamics in Au-Seeded GaSb Nanowires;Crystal Growth & Design;2024-04-25

2. Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy;The Journal of Physical Chemistry Letters;2023-08-11

3. Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product;ACS Photonics;2023-05-23

4. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications;Materials Today Communications;2021-09

5. Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires;Nano Research;2021-03-13

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