Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires-Reference-Cited by-同舟云学术

Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires

Published:2021-03-13 Issue:11 Volume:14 Page:3961-3968
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Sun Jiamin,Han Mingming,Peng Meng,Zhang Lei,Liu Dong,Miao Chengcheng,Ye Jiafu,Pang Zhiyong,He Longbing,Wang Hailu,Li Qing,Wang Peng,Wang Lin,Chen Xiaoshuang,Shan Chongxin,Sun Litao,Hu Weida,Yang Zai-xing

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-021-3321-3.pdf

Reference68 articles.

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3. Li, D. P.; Lan, C. Y.; Manikandan, A.; Yip, S.; Zhou, Z. Y.; Liang, X. G.; Shu, L.; Chueh, Y. L.; Han, N.; Ho, J. C. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nat. Commun. 2019, 10, 1664.

4. Wong-Leung, J.; Yang, I.; Li, Z. Y.; Karuturi, S. K.; Fu, L.; Tan, H. H.; Jagadish, C. Engineering III-V semiconductor nanowires for device applications. Adv. Mater. 2020, 32, 1904359.

5. Yang, Z. D.; Heischmidt, B.; Gazibegovic, S.; Badawy, G.; Car, D.; Crowell, P. A.; Bakkers, E. P. A. M.; Pribiag, V. S. Spin transport in ferromagnet-InSb nanowire quantum devices. Nano Lett. 2020, 20, 3232–3239.

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