Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Link
http://www.nature.com/articles/s41467-019-09606-y.pdf
Reference55 articles.
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3. Yang, Z.-x et al. Complementary metal oxide semiconductor-compatible, high-mobility, 〈111〉-oriented GaSb nanowires enabled by vapor–solid–solid chemical vapor deposition. ACS Nano 11, 4237–4246 (2017).
4. Yang, Z.-x et al. Approaching the hole mobility limit of GaSb nanowires. ACS Nano 9, 9268–9275 (2015).
5. Yang, Z.-x et al. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nat. Commun. 5, 5249 (2014).
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