Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. p-channel FET based on p/n double-quantum-well heterostructure
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3. GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications;Current Applied Physics;2017-07
4. Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide–semiconductor applications;Applied Physics Express;2017-06-23
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