Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Pseudo-complementary FET logic (PCFL): a low-power logic family in GaAs
2. Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor
3. Depletion-mode and enhancement-mode InGaP/GaAs -HEMTs for low supply-voltage applications
4. Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography
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1. Growth experiment and analysis of buffer layer of high in content InGaAs films;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07
2. Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor;Superlattices and Microstructures;2016-07
3. Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements;Materials Science in Semiconductor Processing;2014-10
4. On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET);Solid-State Electronics;2013-01
5. On an Electroless-Plating (EP) Gate Metamorphic Transistor;Electrochemical and Solid-State Letters;2011-01-01
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