Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3365177
Reference14 articles.
1. Gate dielectric formation and MIS interface characterization on Ge
2. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
3. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
4. Thermal desorption of Ge native oxides and the loss of Ge from the surface
5. Deposition of HfO2 on germanium and the impact of surface pretreatments
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