Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems-Reference-Cited by-同舟云学术

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

Published:2019-06-03 Issue:25 Volume:11 Page:22521-22530
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ruan Dun-Bao^ORCID,Liu Po-Tsun^ORCID,Yu Min-Chin,Chien Ta-Chun,Chiu Yu-Chuan,Gan Kai-Jhih,Sze Simon M.

Funder

National Chiao Tung University

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b04257

Reference44 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Metal oxide semiconductor thin-film transistors for flexible electronics

3. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb2O5–Bi2O3–MgO Ceramics as Gate Dielectric on a Plastic Substrate

4. High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

5. Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studying of threshold switching behavior based on programmable metallization cells selector by KMC method;Vacuum;2023-12

2. Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Electron Device Letters;2023-05

3. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory;Vacuum;2022-07

4. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment;IEEE Electron Device Letters;2022-06

5. Tungsten‐Doped Active Layers for High‐Mobility AOS‐TFTs;Amorphous Oxide Semiconductors;2022-05-20