Studying of threshold switching behavior based on programmable metallization cells selector by KMC method

Author:

Zhang Puyi,Ma GuokunORCID,Xiong Zhiyuan,Chen Ao,Wang Cheng,Zhang Lei,Liu Nengfan,Yuan Xiaoxu,Liu Tianjian,Wang HaoORCID

Funder

Science and Technology Major Project of Guangxi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference50 articles.

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3. Advances of RRAM devices: resistive switching mechanisms, materials and bionic synaptic application;Shen;Nanomaterials,2020

4. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020

5. High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications;Yu;Rare Met.,2022

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