Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory

Author:

Hsu Chih-Chieh,Liu Po-TsunORCID,Gan Kai-Jhih,Ruan Dun-Bao,Sze Simon M.

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference32 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film;Li;transistors” Vac,2020

3. Photoresponsivity enhancement and extension of the detection spectrum for amorphous oxide semiconductor based sensors” Advanced;Ruan;Electron. Mater.,2019

4. Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment” Journal of Materials;Zhang;Sci. Technol.,2020

5. High-performance resistive switching in solution-derived IGZO:N memristors by microwave-assisted nitridation;Min;Nanomaterials,2021

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