Effects of thermal annealing on analog resistive switching behavior in bilayer HfO<sub>2</sub>/ZnO synaptic devices: the role of ZnO grain boundaries-Reference-Cited by-同舟云学术

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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO₂/ZnO synaptic devices: the role of ZnO grain boundaries

Published:2024 Issue:9 Volume:16 Page:4609-4619
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

An Yeong-Jin¹,Yan Han¹^ORCID,Yeom Chae-min¹,Jeong Jun-kyo¹,Eadi Sunil Babu¹,Lee Hi-Deok¹^ORCID,Kwon Hyuk-Min²

Affiliation:

1. Department of Electronics Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea

2. Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnic College, Anseong, Kyunggi-Do, 17550, Republic of Korea

Abstract

Schematic illustration of the transition mechanism during the conductive filamentary formation in bilayer HfO2/ZnO synaptic devices (a) without and (b) with thermal annealing.

Funder

National Research Foundation

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR04917E

Reference60 articles.

1. Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

2. In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

3. Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials

4. Spiking neurons from tunable Gaussian heterojunction transistors

5. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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