Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance-Reference-Cited by-同舟云学术

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Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance

Published:2013-07-17 Issue:15 Volume:5 Page:6990-6995
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Jae Chul¹²,Lee Ho-Nyeon³,Im Seongil²

Affiliation:

1. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do 446-712, Korea

2. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

3. Department of Display and Electronic Information, Soonchunhyang University, Asan-si, Chungcheongnam-do 336-745, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am401128p

Reference35 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering

5. Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

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1. High-mobility and high-reliability Zn-incorporated amorphous In₂O₃-based thin-film transistors;Japanese Journal of Applied Physics;2024-07-01

2. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT);Scientific Reports;2024-05-02

3. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors;ACS Applied Materials & Interfaces;2023-09-28

4. Low-Temperature Fabrication of Indium Oxynitride Thin-Film Transistors via Plasma-Assisted Solution Process;IEEE Transactions on Electron Devices;2023-07

5. Aggressively Scaled Atomic Layer Deposited Amorphous InZnO_x Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High G_m(802 μS/μm at V_DS = 2V);2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11

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