Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2 Treatment With H2O2Cosolvent-Reference-Cited by-同舟云学术

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Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2 Treatment With H2O2Cosolvent

Published:2021-05 Issue:5 Volume:42 Page:645-648
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ruan Dun-Bao^ORCID,Chang-Liao Kuei-Shu^ORCID,Liu Guan-Ting,Chiu Yu-Chuan,Gan Kai-Jhih,Liu Po-Tsun^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9415873/09383307.pdf?arnumber=9383307

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

2. High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

3. Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment;Applied Physics Express;2023-05-01

4. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment;IEEE Electron Device Letters;2022-06

5. Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation;Applied Physics Letters;2021-12-06

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