High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation-Reference-Cited by-同舟云学术

High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 Silicon Nanoelectronics Workshop (SNW)
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Author:

Wu Cheng-Yu¹,Ruan Dun-Bao²,Chang-Liao Kuei-Shu¹,Lee Yao-Jen³,Chiu Yu-Chuan⁴,Liu Chih-Wei¹,Liu Guan-Ting¹,Kuo Bo-Lien¹,Yang Kai-Chun¹,Li Cheng-Han¹,Liu Po-Tsun⁴

Affiliation:

1. National Tsing Hua University,Department of Engineering and System Science,TAIWAN

2. College of Physics and Information Engineering, Fuzhou University,CHINA

3. Taiwan Semiconductor Research Institute,TAIWAN

4. Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University,Department of Photonics,TAIWAN

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10183871/10183917/10183924.pdf?arnumber=10183924

Reference17 articles.

1. H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

2. Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

3. Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

4. Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition